Share Email Print

Proceedings Paper

Field-emission scanning probe lithography with self-actuating and self-sensing cantilevers for devices with single digit nanometer dimensions
Author(s): Ivo W. Rangelow; Claudia Lenk ; Martin Hofmann ; Steve Lenk ; Tzvetan Ivanov ; Ahmad Ahmad ; Marcus Kaestner; Elshad Guliyev; Christoph Reuter; Matthias Budden; Jens-Peter Zöllner; Mathias Holz ; Alexander Reum; Zahid Durrani; Mervyn Jones; Cemal Aydogan; Mahmut Bicer; B. Erdem Alaca; Michael Kuehnel; Thomas Fröhlich; Roland Fuessl; E. Manske
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Cost-effective generation of single-digit nano-lithographic features could be the way by which novel nanoelectronic devices, as single electron transistors combined with sophisticated CMOS integrated circuits, can be obtained. The capabilities of Field-Emission Scanning Probe Lithography (FE-SPL) and reactive ion etching (RIE) at cryogenic temperature open up a route to overcome the fundamental size limitations in nanofabrication. FE-SPL employs Fowler-Nordheim electron emission from the tip of a scanning probe in ambient conditions. The energy of the emitted electrons (<100 eV) is close to the lithographically relevant chemical excitations of the resist, thus strongly reducing proximity effects. The use of active, i.e. self-sensing and self-actuated, cantilevers as probes for FE-SPL leads to several promising performance benefits. These include: (1) Closed-loop lithography including pre-imaging, overlay alignment, exposure, and post-imaging for feature inspection; (2) Sub-5-nm lithographic resolution with sub-nm line edge roughness; (3) High overlay alignment accuracy; (4) Relatively low costs of ownership, since no vacuum is needed, and ease-of-use. Thus, FE-SPL is a promising tool for rapid nanoscale prototyping and fabrication of high resolution nanoimprint lithography templates. To demonstrate its capabilities we applied FE-SPL and RIE to fabricate single electron transistors (SET) targeted to operate at room temperature. Electrical characterization of these SET confirmed that the smallest functional structures had a diameter of only 1.8 nanometers. Devices at single digit nano-dimensions contain only a few dopant atoms and thus, these might be used to store and process quantum information by employing the states of individual atoms.

Paper Details

Date Published: 19 March 2018
PDF: 13 pages
Proc. SPIE 10584, Novel Patterning Technologies 2018, 1058406 (19 March 2018); doi: 10.1117/12.2299955
Show Author Affiliations
Ivo W. Rangelow, Technische Univ. Ilmenau (Germany)
Claudia Lenk , Technische Univ. Ilmenau (Germany)
Martin Hofmann , Technische Univ. Ilmenau (Germany)
Steve Lenk , Technische Univ. Ilmenau (Germany)
Tzvetan Ivanov , Technische Univ. Ilmenau (Germany)
Ahmad Ahmad , Technische Univ. Ilmenau (Germany)
Marcus Kaestner, Technische Univ. Ilmenau (Germany)
Elshad Guliyev, Technische Univ. Ilmenau (Germany)
Christoph Reuter, Technische Univ. Ilmenau (Germany)
Matthias Budden, Technische Univ. Ilmenau (Germany)
Jens-Peter Zöllner, Technische Univ. Ilmenau (Germany)
Mathias Holz , Nano Analytik GmbH (Germany)
Alexander Reum, Nano Analytik GmbH (Germany)
Zahid Durrani, Imperial College London (United Kingdom)
Mervyn Jones, Imperial College London (United Kingdom)
Cemal Aydogan, TUBITAK - YITAL (Turkey)
Mahmut Bicer, Koç Univ. (Turkey)
B. Erdem Alaca, Koç Univ. (Turkey)
Michael Kuehnel, Technische Univ. Ilmenau (Germany)
Thomas Fröhlich, Technische Univ. Ilmenau (Germany)
Roland Fuessl, Technische Univ. Ilmenau (Germany)
E. Manske, Technische Univ. Ilmenau (Germany)

Published in SPIE Proceedings Vol. 10584:
Novel Patterning Technologies 2018
Eric M. Panning, Editor(s)

© SPIE. Terms of Use
Back to Top