Share Email Print

Proceedings Paper

Ultra-sensitive EUV resists based on acid-catalyzed polymer backbone breaking
Author(s): Theodoros Manouras; Dimitrios Kazazis; Eleftherios Koufakis; Yasin Ekinci; Maria Vamvakaki; Panagiotis Argitis
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The main target of the current work was to develop new sensitive polymeric materials for lithographic applications, focusing in particular to EUV lithography, the main chain of which is cleaved under the influence of photogenerated acid. Resist materials based on the cleavage of polymer main chain are in principle capable to create very small structures, to the dimensions of the monomers that they consist of. Nevertheless, in the case of the commonly used nonchemically amplified materials of this type issues like sensitivity and poor etch resistance limit their areas of application, whereas inadequate etch resistance and non- satisfactory process reliability are the usual problems encountered in acid catalysed materials based on main chain scission. In our material design the acid catalyzed chain cleavable polymers contain very sensitive moieties in their backbone while they remain intact in alkaline ambient. These newly synthesized polymers bear in addition suitable functional groups for the achievement of desirable lithographic characteristics (thermal stability, acceptable glass transition temperature, etch resistance, proper dissolution behavior, adhesion to the substrate). Our approach for achieving acceptable etch resistance, a main drawback in other main chain cleavable resists, is based on the introduction of polyaromatic hydrocarbons in the polymeric backbone, whereas the incorporation of an inorganic component further enhances the etch resistance. Single component systems can also be designed following the proposed approach by the incorporation of suitable PAGs and base quencher molecules in the main chain. Resist formulations based on a random copolymer designed according to the described rules evaluated in EUV exhibit ultrahigh sensitivity, capability for high resolution patterning and overall processing characteristics that make them strong candidates for industrial use upon further optimization.

Paper Details

Date Published: 19 March 2018
PDF: 10 pages
Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105831R (19 March 2018); doi: 10.1117/12.2299853
Show Author Affiliations
Theodoros Manouras, Institute of Electronic Structure and Laser, FORTH (Greece)
Institute of Nanoscience and Nanotechnology, NCSR Demokritos (Greece)
Dimitrios Kazazis, Paul Scherrer Institut (Switzerland)
Eleftherios Koufakis, Institute of Electronic Structure and Laser, FORTH (Greece)
Univ. of Crete (Greece)
Yasin Ekinci, Paul Scherrer Institut (Switzerland)
Maria Vamvakaki, Institute of Electronic Structure and Laser, FORTH (Greece)
Univ. of Crete (Greece)
Panagiotis Argitis, Institute of Nanoscience and Nanotechnology, NCSR Demokritos (Greece)

Published in SPIE Proceedings Vol. 10583:
Extreme Ultraviolet (EUV) Lithography IX
Kenneth A. Goldberg, Editor(s)

© SPIE. Terms of Use
Back to Top