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Proceedings Paper

Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers
Author(s): Frédéric Grillot; D. Arsenijevic; H. Huang; D. Bimberg
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Paper Abstract

Quantum dot nanostructures are one of the best practical examples of emerging nanotechnologies hence offering superior properties as compared to their quantum well counterparts. InAs/GaAs quantum dots allow producing energy- and cost-efficient devices with outstanding temperature stability, lowest threshold current, ultrafast gain dynamics, and low amplified spontaneous emission. This paper reports on the recent achievements in ultrafast and nonlinear dynamics properties of InAs/GaAs quantum dot lasers for radar systems, wireless communications and high-speed optical communications. Passive mode-locking is shown to exhibit a great potential for microwave, millimeter-wave and Terahertz signal generation with high repetition frequency tuning and jitter reduction. The optical feedback is also used to stabilize the pulse emission leading an integrated timing jitter as low as 90 fs without consuming additional power. Lastly, multimode optical feedback dynamics of InAs/GaAs QD lasers emitting on different lasing states is also studied. In particular, a chaos free operation is observed for the first time from the ground state lasing operation.

Paper Details

Date Published: 21 February 2018
PDF: 11 pages
Proc. SPIE 10543, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV, 105430M (21 February 2018); doi: 10.1117/12.2299678
Show Author Affiliations
Frédéric Grillot, LTCI, Télécom ParisTech, Univ. Paris-Saclay (France)
Ctr. for High Technology Materials, Univ. of New Mexico (United States)
D. Arsenijevic, Technische Univ. Berlin (Germany)
H. Huang, LTCI, Télécom ParisTech, Univ. Paris-Saclay (France)
D. Bimberg, Technische Univ. Berlin (Germany)
King Abdulaziz Univ. (Saudi Arabia)

Published in SPIE Proceedings Vol. 10543:
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV
Diana L. Huffaker; Holger Eisele, Editor(s)

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