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Illumination source optimization in EUV lithography for staggered contact holes and pillars for DRAM applications
Author(s): Jo Finders; Ziyang Wang; John McNamara; Gijsbert Rispens; Pär Broman; Chang-Nam Ahn; Inhwan Lee; Hwan Kim; Junghyun Kang; Yoonsuk Hyun; Chang-Moon Lim
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Paper Abstract

Illumination source optimization is a very fundamental task in wafer lithography. By optimizing the incidence angles at the reticle, the combined diffraction behavior of mask and projection optics can be modified. One of the most critical parameter to control in EUV lithography is contrast at best and through focus as this drives the stochastic effects. In this work, we will look at the illumination source optimization for staggered CH and pillars for DRAM applications driven by fundamental considerations at diffraction level.

Paper Details

Date Published: 2 May 2018
PDF: 6 pages
Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830Y (2 May 2018); doi: 10.1117/12.2299598
Show Author Affiliations
Jo Finders, ASML Netherlands B.V. (Netherlands)
Ziyang Wang, ASML Netherlands B.V. (Netherlands)
John McNamara, ASML Netherlands B.V. (Netherlands)
Gijsbert Rispens, ASML Netherlands B.V. (Netherlands)
Pär Broman, ASML Netherlands B.V. (Netherlands)
Chang-Nam Ahn, ASML Korea Co., Ltd. (Korea, Republic of)
Inhwan Lee, SK Hynix, Inc. (Korea, Republic of)
Hwan Kim, SK Hynix, Inc. (Korea, Republic of)
Junghyun Kang, SK Hynix, Inc. (Korea, Republic of)
Yoonsuk Hyun, SK Hynix, Inc. (Korea, Republic of)
Chang-Moon Lim, SK Hynix, Inc. (Korea, Republic of)


Published in SPIE Proceedings Vol. 10583:
Extreme Ultraviolet (EUV) Lithography IX
Kenneth A. Goldberg, Editor(s)

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