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Thermomechanical changes of EUV mask and absorber dependency
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Paper Abstract

Thermal and structural deformations of extreme ultraviolet lithography (EUVL) masks during the exposure process may become important issues as these masks are subject to rigorous image placement and flatness change. The reflective masks used for EUVL absorb energy during exposure, and the temperature of the mask rises as a result. This can cause thermomechanical deformation that can reduce the pattern quality. Therefore, it is necessary to predict and optimize the effect of energy transmitted from the extreme ultraviolet (EUV) light source and the resultant patterns of complex multilayer structured EUV masks. Our study shows that temperature accumulation and deformation of the EUV mask are dependent on the absorber structure.

Paper Details

Date Published: 22 March 2018
PDF: 10 pages
Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 1058322 (22 March 2018); doi: 10.1117/12.2299495
Show Author Affiliations
Chung-Hyun Ban, Hanyang Univ. (Korea, Republic of)
Sung-Gyu Lee, Hanyang Univ. (Korea, Republic of)
Eun-Sang Park, Hanyang Univ. (Korea, Republic of)
Jae-Hun Park, Hanyang Univ. (Korea, Republic of)
Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 10583:
Extreme Ultraviolet (EUV) Lithography IX
Kenneth A. Goldberg, Editor(s)

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