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Proceedings Paper

Er3+ phosphate glass optical waveguide amplifiers at 1.5 um on silicon
Author(s): Yingchao Yan; Anne Jans Faber; Henk de Waal
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Paper Abstract

RF-sputtering techniques were employed to produce Er-doped phosphate glass films on thermally oxidized silicon wafers. Film compositions were characterized by X-ray photoelectron spectroscopy. As-deposited films showed very low Er luminescence lifetimes. By postannealing of deposited films in pure oxygen, Er photoluminescence emission lifetime of the 4I13/2 - 4I15/2 transition could be increased from 1 - 2 ms to 8 - 9 ms. The long Er lifetime of the deposited films is very promising for achieving an optical gain. A dependence of measured lifetimes on pump power was observed which are related to a up-conversion quenching process. After postannealing, the sputtered waveguides showed relatively low attenuation loss at the potential pumping and signaling wavelengths. The loss spectrum from 700 nm to 1600 nm was measured by two-prism coupling. The films were easy to be patterned by lithography and ridge channel waveguides were developed by argon plasma etching.

Paper Details

Date Published: 10 January 1996
PDF: 5 pages
Proc. SPIE 2695, Functional Photonic and Fiber Devices, (10 January 1996); doi: 10.1117/12.229939
Show Author Affiliations
Yingchao Yan, Eindhoven Univ. of Technology (Netherlands)
Anne Jans Faber, Eindhoven Univ. of Technology (Netherlands)
Henk de Waal, TNO-Institute of Applied Physics (Netherlands)


Published in SPIE Proceedings Vol. 2695:
Functional Photonic and Fiber Devices
S. Iraj Najafi; Mario Nicola Armenise, Editor(s)

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