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Advanced combined overlay and CD uniformity measurement mark for double patterning
Author(s): Hsiao Lin Hsu; En Chuan Lio; Charlie Chen; Jia Hung Chang; Sho Shen Lee; Stefan Buhl; Manuela Gutsch; Patrick Lomtscher; Martin Freitag; Boris Habets; Rex Liu
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Paper Abstract

Advanced processing methods like multiple patterning necessitate improved intra-layer uniformity and balancing monitoring for overlay and CD. To achieve those requirements without major throughout impact, a new advanced mark for measurement is introduced. Based on an optical measurement, this mark delivers CD and overlay results for a specified layer at once. During the conducted experiments at front-end-of-line (FEOL) process area, a mark selection is done and the measurement capability of this mark design is verified. Gathered results are used to determine lithography to etch biases and intra-wafer signatures for CD and overlay. Furthermore, possible use cases like dose correction recipe creation and process signature monitoring were discussed.

Paper Details

Date Published: 13 March 2018
PDF: 17 pages
Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105851H (13 March 2018); doi: 10.1117/12.2299299
Show Author Affiliations
Hsiao Lin Hsu, United Microelectronics Corp. (Taiwan)
En Chuan Lio, United Microelectronics Corp. (Taiwan)
Charlie Chen, United Microelectronics Corp. (Taiwan)
Jia Hung Chang, United Microelectronics Corp. (Taiwan)
Sho Shen Lee, United Microelectronics Corp. (Taiwan)
Stefan Buhl, Qoniac GmbH (Germany)
Manuela Gutsch, Qoniac GmbH (Germany)
Patrick Lomtscher, Qoniac GmbH (Germany)
Martin Freitag, Qoniac GmbH (Germany)
Boris Habets, Qoniac GmbH (Germany)
Rex Liu, Qoniac Taiwan Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 10585:
Metrology, Inspection, and Process Control for Microlithography XXXII
Vladimir A. Ukraintsev, Editor(s)

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