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Proceedings Paper

Optical microlithographic phase-shifting mask technology
Author(s): Boru Feng
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Paper Abstract

In the paper, described systematically are the primary principles, computer simulation and photolithographic exposure experiments of phase-shifting mask (PSM) technology. The results of PSM computer simulation and exposure are given. The research shows that with PSMs resolution and process latitude can not be markedly improved unless some critical parameter requirements are satisfied. By use of a 10 × reduction g-line step-and-repeat stepper and chromeless PSM, clear photoresist patterns of 0.2 μm are achived. It is also shown that PSM technology has the excellent properties in resolution improvement, extending lifetime of optical microlithography and further developing the photolithography resolution limit.

Paper Details

Date Published: 1 September 1996
PDF: 2 pages
Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 27783C (1 September 1996); doi: 10.1117/12.2299002
Show Author Affiliations
Boru Feng, Institute of Optics and Electronics (China)


Published in SPIE Proceedings Vol. 2778:
17th Congress of the International Commission for Optics: Optics for Science and New Technology
Joon-Sung Chang; Jai-Hyung Lee; ChangHee Nam, Editor(s)

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