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Proceedings Paper

Optical properties of SiOxNy thin films prepared by ion beam assisted deposition
Author(s): Hyun Ju Cho
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Paper Abstract

Silicon oxynitride thin films were made by reactive ion beam assisted deposition. The refractive index of deposited films, determined by both envelope method and prism coupling method, was able to be varied from 1.46 of SiO2 to 1.97 of Si3N4 by controlling the stoichimetry. The packing density of silicon oxyniteride films was measured by the vacuum-to-air spectral shift and water absorption band.

Paper Details

Date Published: 1 September 1996
PDF: 2 pages
Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 27782V (1 September 1996); doi: 10.1117/12.2298985
Show Author Affiliations
Hyun Ju Cho, Inha Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 2778:
17th Congress of the International Commission for Optics: Optics for Science and New Technology
Joon-Sung Chang; Jai-Hyung Lee; ChangHee Nam, Editor(s)

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