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Proceedings Paper

Fabrication of 0.15 μm SOI p-MOSFETs using synchrotron radiation x-ray lithography
Author(s): Sang Soo Choi
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Paper Abstract

0.15 μm SOI p-MOSFETs were fabricated by XRL (x-ray lithography) for gate and contact layer's patterning and optical lithography for other layers'.

Paper Details

Date Published: 1 September 1996
PDF: 2 pages
Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 277807 (1 September 1996); doi: 10.1117/12.2298889
Show Author Affiliations
Sang Soo Choi, Electronics and Telecommunications Research Institute (Korea, Republic of)


Published in SPIE Proceedings Vol. 2778:
17th Congress of the International Commission for Optics: Optics for Science and New Technology
Joon-Sung Chang; Jai-Hyung Lee; ChangHee Nam, Editor(s)

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