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Proceedings Paper

Infrared reflectivity of semiconductor magnetoplasmas
Author(s): F. Elmzughi
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Paper Abstract

The simple expression e=1-w2p/w2 for the frequency dependence of a plasma dielectric function predict areflectivity R = 1 for 0 < co decreasing sharply from unity as co increases above the plasma frequency con. Since o.;: =P'ne2/e m infrared reflectivity of semiconductors can be used as a characterisation technique to determine [he ratio nrme,0 e'where n is the carrier density and me the effective mass. However, #41 a sagnple containing minority carriers (density p aideffective mass mh, say) this technique loses its power since then co' = neleome + pe/comh. It has been pointed out'P.that if a magnetic field is applied the parameters of both types of carrier can be determined, essentially because the Lorentzforce acts differently on electrons and holes. The dielectric tensor in the presence of a field takes a gyrotropic form quotedexplicitly elsewhere(1).

Paper Details

Date Published: 30 November 2017
PDF: 2 pages
Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21048W (30 November 2017); doi: 10.1117/12.2298752
Show Author Affiliations
F. Elmzughi, Univ. of Essex (United Kingdom)


Published in SPIE Proceedings Vol. 2104:
18th International Conference on Infrared and Millimeter Waves
James R. Birch; Terence J. Parker, Editor(s)

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