Share Email Print

Proceedings Paper

Phase shift and loss mechanism of optically excited E-plane electron-hole plasma
Author(s): Ao Sheng Rong
Format Member Price Non-Member Price
PDF $17.00 $21.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

This paper describes the phase shift and loss mechanism of the optically excited E-plane electron-hole plasma. ForGaAs as the inserted semiconductor, it is shown that an optically sensitive regime occurs, where the phase shift ishighly influenced by the illumination and the peak of the optically induced loss exists. The regime is changed by thedistribution profile of the excess carriers. It is observed that at the high injection light power level, the opticallyexcited plasma behaves as the metallic strip does. The field distributions at the optically excited plasma section are alsodemonstrated, which support the field-displacement effects of the plasma.

Paper Details

Date Published: 30 November 2017
PDF: 2 pages
Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21047M (30 November 2017); doi: 10.1117/12.2298706
Show Author Affiliations
Ao Sheng Rong, Southeast Univ. (China)

Published in SPIE Proceedings Vol. 2104:
18th International Conference on Infrared and Millimeter Waves
James R. Birch; Terence J. Parker, Editor(s)

© SPIE. Terms of Use
Back to Top