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Proceedings Paper

A FEL study of relaxation between bound donor states in Si:P
Author(s): K. K. Geerinck
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Paper Abstract

The present paper concerns a study of the life time Ti. of the excited 2p0 level of shallowdonor phosphorus in silicon at low temperatures (T /-e:dd 18 K) and in the absence of anexternal magnetic field. The experiments are performed usin g the free electron laser(FEL) FELIX of the FOM institute for plasma physics Rijnhuizen. As discussed below T1is determined from the behaviour of the is ---+ 2p0 transition at 275 cm' upon saturationwith this laser.

Paper Details

Date Published: 30 November 2017
PDF: 2 pages
Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 210476 (30 November 2017); doi: 10.1117/12.2298690
Show Author Affiliations
K. K. Geerinck, Univ. of Technology Delft (Netherlands)


Published in SPIE Proceedings Vol. 2104:
18th International Conference on Infrared and Millimeter Waves
James R. Birch; Terence J. Parker, Editor(s)

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