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Proceedings Paper

A far infra-red active medium based on shallow acceptor states in semiconductors
Author(s): V. N. Shastin
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Paper Abstract

Theoretical proposals concerning far-infrared activity based on shallow acceptor state opticaltransitions in p-Ge and p-Si semiconductors are discussed. Preliminary experimental investigationswill be presented.

Paper Details

Date Published: 30 August 1993
PDF: 1 pages
Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21042U (30 August 1993); doi: 10.1117/12.2298534
Show Author Affiliations
V. N. Shastin, Institute of Applied Physics (Russian Federation)


Published in SPIE Proceedings Vol. 2104:
18th International Conference on Infrared and Millimeter Waves
James R. Birch; Terence J. Parker, Editor(s)

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