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Proceedings Paper

New hot-carrier effects in submicron structures for infraredand millimeter wave receivers
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Paper Abstract

Advances in technology of submicron semiconductor structures make it possible to de- velop a great variety of novel non-conventional Ohotoreceivers. Even if consideringthe classical effects only, one can see that various kinds of the effects could takeplace in the structures of that scale. The nature of the effect depends on relationsbetween the device active layer thickness a and the main physical lengths whichdescribe the relaxation processes in a semiconductor. For submicron structures, therelations

Paper Details

Date Published: 30 August 1993
PDF: 2 pages
Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21040N (30 August 1993); doi: 10.1117/12.2298455
Show Author Affiliations
Vladimir B. Yurchenko, Kharkov Polytechnic Institute (Ukraine)

Published in SPIE Proceedings Vol. 2104:
18th International Conference on Infrared and Millimeter Waves
James R. Birch; Terence J. Parker, Editor(s)

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