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Proceedings Paper

Effects of ionising radiation in Ge:Ga and Ge:Be far-infrared photoconductors
Author(s): M. C. Price
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Paper Abstract

Doped germanium photoconductors cooled to temperatures —3 K are the most sensitive detectors for wavelengths >30pm . However under very low far-infrared (FIR.) backgrounds —fW, expected in-flight on the ISO LWS, these detectorscan exhibit non-linear behaviour which can severely compromise the overall sensitivity. These non-linear effects can bebroadly catagorised into two types.

Paper Details

Date Published: 30 August 1993
PDF: 2 pages
Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21040J (30 August 1993); doi: 10.1117/12.2298451
Show Author Affiliations
M. C. Price, Queen Mary and Westfield College (United Kingdom)

Published in SPIE Proceedings Vol. 2104:
18th International Conference on Infrared and Millimeter Waves
James R. Birch; Terence J. Parker, Editor(s)

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