Share Email Print
cover

Proceedings Paper

Effects of ionising radiation in Ge:Ga and Ge:Be far-infrared photoconductors
Author(s): M. C. Price
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Doped germanium photoconductors cooled to temperatures —3 K are the most sensitive detectors for wavelengths >30pm . However under very low far-infrared (FIR.) backgrounds —fW, expected in-flight on the ISO LWS, these detectorscan exhibit non-linear behaviour which can severely compromise the overall sensitivity. These non-linear effects can bebroadly catagorised into two types.

Paper Details

Date Published: 30 August 1993
PDF: 2 pages
Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21040J (30 August 1993); doi: 10.1117/12.2298451
Show Author Affiliations
M. C. Price, Queen Mary and Westfield College (United Kingdom)


Published in SPIE Proceedings Vol. 2104:
18th International Conference on Infrared and Millimeter Waves
James R. Birch; Terence J. Parker, Editor(s)

© SPIE. Terms of Use
Back to Top