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Proceedings Paper

Bib photodetectors based on antimony doped silicon
Author(s): G. Sirmain
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Paper Abstract

Firstly conceived at Rockwell Science Center byPetroff and Stapelbroek in 1977 (Ref. 1), the BlockedImpurity Band photodetector (BIB) is now recognised toprovide significant improvements in comparison withconventional photoconductors. Because they areepitaxially grown, they are easily developed in arrayconfigurations having quite uniform pixel response. Theyare inherently radiation hard due to their small volume. Inaddition, they have better noise characteristics and theymay give some extension of the spectral response towardslonger wavelengths. This paper presents some results onBIB photodetectors based on antimony doped silicon,which gave a significant spectral responsivity in the30 pm wavelength region.

Paper Details

Date Published: 30 August 1993
PDF: 2 pages
Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21040H (30 August 1993); doi: 10.1117/12.2298449
Show Author Affiliations
G. Sirmain, SNCMP-INSA (France)


Published in SPIE Proceedings Vol. 2104:
18th International Conference on Infrared and Millimeter Waves
James R. Birch; Terence J. Parker, Editor(s)

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