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Proceedings Paper

Far-infrared photoconductivity in n-GaAs at filamentary current flow
Author(s): V. G. Golubev
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Paper Abstract

At low temperatures the autocatalytic process of impact ionization of shallow impurities in high purity semiconductors leads to highly nonlinear current-voltage characteristics. At a critical breakdown voltage, the impact ionization rate of impurities exceeds the capture rate of free carriers at low concentrations, yielding a rapid increase of the current for a practically constant voltage across the sample. At breakdown a strongly ionized channel is formed in the sample constituting a current filament which carries the total current [1]. Any increase of the current is then caused by lateral growth of the current filament.

Paper Details

Date Published: 14 December 1992
PDF: 2 pages
Proc. SPIE 1929, 17th International Conference on Infrared and Millimeter Waves, 192944 (14 December 1992); doi: 10.1117/12.2298265
Show Author Affiliations
V. G. Golubev, A.F. Ioffe Physico-Technical Institute (Russian Federation)


Published in SPIE Proceedings Vol. 1929:
17th International Conference on Infrared and Millimeter Waves
Richard J. Temkin, Editor(s)

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