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Proceedings Paper

Antenna-coupled thin-film nanometer metal-oxide-metal infrared diodes
Author(s): I. Wilke
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Paper Abstract

We manufacture Ni-NiO-Ni diodes with minimum contact areas of 240 • 240 nm2 mounted on 380 1.1m Si wafers and attached to thin-film dipole antennas of 240 nm width and 1.6-22 jim length. They are tested e.g. with polarized 10 pm CO2-laser radi- ation. Their efficiency is improved by replacing the 380 pm Si substrate by 3.7-5.8 pm membranes and by other means.

Paper Details

Date Published: 14 December 1992
PDF: 4 pages
Proc. SPIE 1929, 17th International Conference on Infrared and Millimeter Waves, 19292R (14 December 1992); doi: 10.1117/12.2298216
Show Author Affiliations
I. Wilke, Swiss Federal Institute of Technology (Switzerland)

Published in SPIE Proceedings Vol. 1929:
17th International Conference on Infrared and Millimeter Waves
Richard J. Temkin, Editor(s)

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