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Proceedings Paper

A high precision reflectometer for the study of optical properties of materials in the submillimeter
Author(s): A. J. Gatesman
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Paper Abstract

A high precision reflectometer has been developed to measure the reflectivity (R) of various metals in the submillimeter frequency regime of the spectrum from 20 cm-1 - 85 cm-1. A high-purity (p ?.. 40K Ohm-cm) single crystal silicon etalon was designed and used as the reflection standard. Optical properties of the silicon were characterized using a submillimeter ellipsometer specifically designed for materials characterization at these frequencies. This enabled the reflectivity of the silicon to be calculated to a relatively high degree and thus achieve a final measurement precision for R of - 0.1%.

Paper Details

Date Published: 14 December 1992
PDF: 2 pages
Proc. SPIE 1929, 17th International Conference on Infrared and Millimeter Waves, 19291B (14 December 1992); doi: 10.1117/12.2298164
Show Author Affiliations
A. J. Gatesman, Univ. of Massachusetts Lowell (United States)


Published in SPIE Proceedings Vol. 1929:
17th International Conference on Infrared and Millimeter Waves
Richard J. Temkin, Editor(s)

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