Share Email Print

Proceedings Paper

Investigation of the electrical behavior of integrated waveguide-photodetectors: application to integrated waveguide-PIN photodiode
Author(s): Jean-Francois Vinchant; Jean-Pierre Vilcot; Didier J. Decoster
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We present the electrical behavior of an integrated waveguide/photodetector based on the absorption of the evanescent optical field in an absorbing layer, deposited on the top of the waveguiding layer. We establish the expression of the electron-hole pair generation rate, for such a device. Then, we apply this result to the calculation of the dynamic quantum efficiency of an integrated waveguide/PIN-photodiode. The static and dynamic behaviors of GaInAs PIN-photodiodes monolithically integrated on a classical n/nt InP homostructure waveguide or on a GaInAsP/InP heterostructure waveguide are discussed and optimized structures are pointed out.

Paper Details

Date Published: 1 November 1990
PDF: 12 pages
Proc. SPIE 1338, Optoelectronic Devices and Applications, (1 November 1990); doi: 10.1117/12.22981
Show Author Affiliations
Jean-Francois Vinchant, Univ. des Sciences et Techniqu (France)
Jean-Pierre Vilcot, Univ. des Sciences et Techniqu (France)
Didier J. Decoster, Univ. des Sciences et Techniqu (France)

Published in SPIE Proceedings Vol. 1338:
Optoelectronic Devices and Applications
Sriram Sriram, Editor(s)

© SPIE. Terms of Use
Back to Top