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Proceedings Paper

A high gain quasi-monolithic horn antenna
Author(s): George V. Eleftheriades
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Paper Abstract

Integrated horn antennas have been proved to be very well suited for millimeter-wave applications. They consist of a strip-dipole antenna suspended on a thin dielectric membrane inside a pyramidal cavity etched in silicon [1]. The antennas are free from surface-wave losses and fully monolithic. However their large flare-angle of 70°, which is inherent in the anisotropic etching of < 100 > silicon, limits their gain below 13dB and their 10dB beamwidth above 90°. In this paper a quasi-monolithic dual-mode horn is introduced which increases the gain to 20dB with a high circular symmetry and a high 97% Gaussian coupling (fig. 1). As shown in figure 1, a machined section has been superimposed on a standard integrated horn antenna to increase the radiating aperture to 3.56λ. The junction of the integrated section and the machined section acts as a mode converter which mainly converts some of the incident TE10 mode to the TE12, TM12 modes. The modes are properly phased on the radiating aperture by selecting the flare-angle and the length of the machined section. This results in highly symmetric, low cross-polarization far-field patterns.

Paper Details

Date Published: 4 December 2017
PDF: 2 pages
Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 157673 (4 December 2017); doi: 10.1117/12.2297968
Show Author Affiliations
George V. Eleftheriades, NASA Ctr. for Space Terahertz Technology (United States)


Published in SPIE Proceedings Vol. 1576:
16th International Conference on Infrared and Millimeter Waves
Minh Quang Tran, Editor(s)

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