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Proceedings Paper

Electron ballistic transport in submicron GaAs Shottky barrier diode
Author(s): A. Yu. Gorbachev
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Paper Abstract

Electron transport in submioron GaAs Shottky diode has been simulated under the barrier capacitance modulation conditions by high frequency (f>100 GHz) voltage pumping signal.

Paper Details

Date Published: 1 October 1991
PDF: 1 pages
Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15766N (1 October 1991); doi: 10.1117/12.2297952
Show Author Affiliations
A. Yu. Gorbachev, Institute of Radioengineering and Electronics (Russian Federation)

Published in SPIE Proceedings Vol. 1576:
16th International Conference on Infrared and Millimeter Waves
Minh Quang Tran, Editor(s)

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