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Proceedings Paper

IR detection at wavelengths up to 200 microns in extrinsic semiconductor devices
Author(s): A. G. U. Perera
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Paper Abstract

The concept of far infrared photocathodes involving work functions at interfaces between lightly doped and heavily doped silicon has been previously discussed and device structures were shown to have response out to 60 microns.[1] Si, Ge and InGaAs p-i-n structures with different interfacial workfunctions giving rise to longwavelength thresholds up to 200 microns are reported here. Preliminary estimates of responsivity and detectivity for these non-optimized samples are encouraging. Work function estimates based on the different cutoff wavelengths show that this approach can be used to tailor the cutoff wavelength by changing the impurity concentration near the metal-insulator transition.

Paper Details

Date Published: 1 October 1991
PDF: 2 pages
Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15766I (1 October 1991); doi: 10.1117/12.2297947
Show Author Affiliations
A. G. U. Perera, Univ. of Pittsburgh (United States)

Published in SPIE Proceedings Vol. 1576:
16th International Conference on Infrared and Millimeter Waves
Minh Quang Tran, Editor(s)

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