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Proceedings Paper

Light controlled millimeter-wave devices
Author(s): V. V. Gusakov
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Paper Abstract

In the successful approach to millimeter-wave and particularly submillimeter wave circuity, it has become apparent the techniques commonly used in the microwave region are inapplicable. It has recently been demonstrated that laser-excited highly conductive bulk semiconductor (silicon or gallium arsenide) can be used for high-speed optoelectronic controlled devices getting signals up to the submillimeter-wave region [1]. The advantages of optical control include short response time, high modulation rates, inherent high dc and reverse-signal isolation, compatibility with optical fibers, immunity to electromagnetic interference and low cost. With the rapid development of solid-state millimeter devices and electrooptics, it became apparent that this devices and systems can be controlled by optical illumination.

Paper Details

Date Published: 1 October 1991
PDF: 2 pages
Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 157642 (1 October 1991); doi: 10.1117/12.2297859
Show Author Affiliations
V. V. Gusakov, Saratov State Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 1576:
16th International Conference on Infrared and Millimeter Waves
Minh Quang Tran, Editor(s)

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