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Proceedings Paper

On resonance photo-tunneling in quantum well-heterostructures
Author(s): Ar. G. Alexanian
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Paper Abstract

Spectral analysis of pZnSb-nCdTe heterostructures (HS) obtained by a laser-pulse epitaxy method has shown that such HS exhibit photo-sensitivity beyond the absorption edge at T=78 K for a narrowband semiconductor. Up to a wavelength λ=7μm [1]. This photo-sensitivity value is only 6 times smaller than its maximum at a fundamental absorption wavelength λ=4.3μm. Due to HS thickness, this effect cannot be explained by the usual tunneling

Paper Details

Date Published: 1 October 1991
PDF: 2 pages
Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15763E (1 October 1991); doi: 10.1117/12.2297835
Show Author Affiliations
Ar. G. Alexanian, Institute of Radiophysics and Electronics (Armenia)

Published in SPIE Proceedings Vol. 1576:
16th International Conference on Infrared and Millimeter Waves
Minh Quang Tran, Editor(s)

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