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Proceedings Paper

FIR nonlinear methods in semiconductor transport
Author(s): Fritz Keilmann
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Paper Abstract

The transport of charge carriers in semiconductors is fundamental to electronics — usually however one measures average properties only, e.g. the mobility due to collisions averaged over all carrier energies. Several works have shown that radiation in the far infrared can selectively interact with certain subensembles of the carrier distribution, and thus make possible to perform state-selective measurements of e.g. the scattering time (ns to fs time scale). By using step-tunable pulsed gas lasers, with power up to 1 MW, a nonthermal population can be induced resulting in saturated transmission, saturated photo-conductance and nonlinearities in other effects such as in the photon drag effect. A great advantage over common optical pumping in the near infrared or visible spectrum is that the far-infrared radiation does not produce any extra electron-hole pairs.

Paper Details

Date Published: 1 October 1991
PDF: 1 pages
Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 157636 (1 October 1991); doi: 10.1117/12.2297827
Show Author Affiliations
Fritz Keilmann, Max-Planck-Institut für Festkörperforschung (Germany)


Published in SPIE Proceedings Vol. 1576:
16th International Conference on Infrared and Millimeter Waves
Minh Quang Tran, Editor(s)

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