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Proceedings Paper

Narrow band tunable sub-millimeter hot hole semiconductor laser
Author(s): L. E. Vorobjev
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Paper Abstract

The hot holes population inversion (PI) and FIR amplification mechanism in germanium in crossed electric and magnetic fields at low temperature were proposed in 1979 [1]. The hot holes lasers were constructed for the first time in 1982 at LSTU [2]. The stimulated emission due to light holes (LH) - to heavy holes (HH) transitions (Fig.1) was observed later by Andronov with coworkers and Komiyama with coworkers [3]. The stimulated intersubband emission provided with nonselective resonator covers the spectral ranges λ = 80...120 and 150..210 μm.

Paper Details

Date Published: 1 October 1991
PDF: 2 pages
Proc. SPIE 1576, 16th International Conference on Infrared and Millimeter Waves, 15762G (1 October 1991); doi: 10.1117/12.2297801
Show Author Affiliations
L. E. Vorobjev, Leningrad State Technical Univ. (Russian Federation)

Published in SPIE Proceedings Vol. 1576:
16th International Conference on Infrared and Millimeter Waves
Minh Quang Tran, Editor(s)

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