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A comparison of different methods of characterizing EUV photoresist shrinkage
Author(s): Ramya Viswanathan; Scott Mansfield; Wenxin Li; Shuhai Fan; Roger Cornell; Hongxin Zhang
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Paper Abstract

The efficacy of OPC models depends on the ability to determine the physical dimensions of a large variety of photoresist patterns. This ability is impacted by a long observed phenomenon, photoresist shrinkage during CD-SEM metrology. As technology dimensions have scaled, the ability to directly measure the photoresist physical dimensions have diminished, while the need to reduce sources of uncertainty and error have increased. It has therefore become imperative to find other techniques to characterize this effect. In this paper, we compare methods of characterizing photoresist shrinkage of patterns using both etch-based and metrology-based approaches.

Paper Details

Date Published: 19 March 2018
PDF: 9 pages
Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830Z (19 March 2018); doi: 10.1117/12.2297695
Show Author Affiliations
Ramya Viswanathan, GLOBALFOUNDRIES Inc. (United States)
Scott Mansfield, GLOBALFOUNDRIES Inc. (United States)
Wenxin Li, GLOBALFOUNDRIES Inc. (United States)
Shuhai Fan, GLOBALFOUNDRIES Inc. (United States)
Roger Cornell, GLOBALFOUNDRIES Inc. (United States)
Hongxin Zhang, GLOBALFOUNDRIES Inc. (United States)

Published in SPIE Proceedings Vol. 10583:
Extreme Ultraviolet (EUV) Lithography IX
Kenneth A. Goldberg, Editor(s)

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