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Proceedings Paper

High-throughput defect inspection for arbitrarily shaped EUV absorber patterns (Conference Presentation)

Paper Abstract

In this paper, we present a method for accurate EUV mask inspection of arbitrarily shaped absorber patterns using lensless imaging methods. With our reflective-mode EUV mask scanning lensless imaging microscope (RESCAN), we have imaged a mask with programmed defects and present here the computed defect map for both die-to-die and die-to-database pattern inspection. The signal-to-noise ratio in both cases was high enough to clearly isolate the defect from the structures (~13 for die-to-die and ~7 for die-to-database inspection). To reach the high-throughput required by industry, we implemented an extended ptychographic algorithm that allows for continuous scanning of the sample and subsequent deconvolution of the distortions in the incident illumination that are due to the fast stage movement. We will show how this algorithm was implemented on a multi-GPU platform for maximum performance that will eventually allow us to reach the final goal of 7 hours scan time for a full mask.

Paper Details

Date Published: 19 March 2018
PDF
Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 1058509 (19 March 2018); doi: 10.1117/12.2297587
Show Author Affiliations
Patrick Helfenstein, Paul Scherrer Institut (Switzerland)
Iacopo Mochi, Paul Scherrer Institut (Switzerland)
Rajendran Rajeev, Paul Scherrer Institut (Switzerland)
Sara Fernandez, Paul Scherrer Institut (Switzerland)
Dimitrios Kazazis, Paul Scherrer Institut (Switzerland)
Yasin Ekinci, Paul Scherrer Institut (Switzerland)


Published in SPIE Proceedings Vol. 10585:
Metrology, Inspection, and Process Control for Microlithography XXXII
Vladimir A. Ukraintsev, Editor(s)

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