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Proceedings Paper

Helium ion active hybrid non-chemically amplified resist (n-CAR) for sub-10 nm patterning applications
Author(s): Satinder K. Sharma; Pulikanti Guruprasad Reddy; Mohamad Ghulam Moinuddin; Subrata Ghosh; Chullikkattil P. Pradeep; Kenneth E. Gonsalves
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Paper Abstract

Patterning of the resist features down to 10 nm node is crucial for futuristic integrated circuits (ICs) technology advancements. In this regard, we design and developed a novel hybrid non-chemically amplified resist (n-CAR) i.e. MAPDST-co-ADSM (where MAPDST = (4-(methacryloyloxy)phenyl) dimethylsulfonium trifluoromethanesulfonate and ADSM = (acetyldibutylstannyl methacrylate)) for high-resolution Helium Ion (He+) Beam Lithography (HIBL) studies. The developed resist exhibits the high sensitivity toward Helium ion radiation and patterned sub-15 nm features at the dose ∼50 μC/cm2 onto negative tone resist formulation. In order to recognize the critical dimension (CD), the resist thin films were analyzed for single pixel exposure dose analysis at He+ exposure dose ranging from ∼30 pC/cm to ∼100 pC/cm. These investigations apparently reveal that 10 nm single pixel line features of the MAPDST-co-ADSM resist is patterned with the dose ∼50.48 pC/cm. The improved patterning resolution of the resist down to 10 nm is due to the inclusion of hybrid tin sensitizer in the resist structures. The MAPDST-co-ADSM showed coherent line edge roughness (LER) and line width roughness (LWR) values for 15 nm lines features as ∼1.67±0.27 nm and ∼2.20 nm respectively.

Monte Carlo-based simulation technique is a standard method for statistical analysis and modelling of stochastic processes; such as noise in circuits, carrier transport and study of ion implantation/interaction/trajectory on materials for integrated circuits. Thus Monte Carlo ion trajectory simulation for MAPDST-co-ADSM resist formulation showed that the negligible (∼0.5%) target damage and recoil generation (atom displacement) of total energy delivered to the system (MAPDST-co-ADSM/Si) in novel HIBL exposure due to much larger stopping power of He+ ion and low proximity effect.

Paper Details

Date Published: 19 March 2018
PDF: 9 pages
Proc. SPIE 10584, Novel Patterning Technologies 2018, 1058409 (19 March 2018); doi: 10.1117/12.2297537
Show Author Affiliations
Satinder K. Sharma, Indian Institute of Technology Mandi (India)
Pulikanti Guruprasad Reddy, Indian Institute of Technology Mandi (India)
Mohamad Ghulam Moinuddin, Indian Institute of Technology Mandi (India)
Subrata Ghosh, Indian Institute of Technology Mandi (India)
Chullikkattil P. Pradeep, Indian Institute of Technology Mandi (India)
Kenneth E. Gonsalves, Indian Institute of Technology Mandi (India)

Published in SPIE Proceedings Vol. 10584:
Novel Patterning Technologies 2018
Eric M. Panning, Editor(s)

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