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Printability estimation of EUV blank defect using actinic image
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Paper Abstract

Printability estimation of blank defects on an extreme ultraviolet (EUV) mask was examined by means of actinic darkfield imaging. A dedicated mask containing 64-nm line and space pattern was fabricated on a blank with known native blank defects. Actinic dark-field images of the defects on the patterned mask were obtained, and the defect signal intensities through focus were measured. The mask was printed through focus onto a wafer with an ASML NXE3300, and the wafer critical dimension (CD) deviations caused by the defect were obtained. A significant relationship is shown between the defect signal intensity and the wafer CD deviation, corresponding well with simulations. It was thus demonstrated that the wafer CD deviation can be estimated via the defect signal intensity on the mask in the actinic darkfield image.

Paper Details

Date Published: 19 March 2018
PDF: 6 pages
Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105831F (19 March 2018); doi: 10.1117/12.2297503
Show Author Affiliations
Takeshi Yamane, Evolving Nano-process Infrastructure Development Ctr., Inc. (Japan)
Takashi Kamo, Evolving Nano-process Infrastructure Development Ctr., Inc. (Japan)
Rik Jonckheere, IMEC (Belgium)


Published in SPIE Proceedings Vol. 10583:
Extreme Ultraviolet (EUV) Lithography IX
Kenneth A. Goldberg, Editor(s)

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