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EUV resist sensitization and roughness improvement by PSCAR with in-line UV flood exposure system
Author(s): Seiji Nagahara; Michael Carcasi; Gosuke Shiraishi; Yuya Kamei; Kathleen Nafus; Yukie Minekawa; Hiroyuki Ide; Yoshihiro Kondo; Takahiro Shiozawa; Keisuke Yoshida; Masashi Enomoto; Kosuke Yoshihara; Hideo Nakashima; Serge Biesemans; Ryo Shimada; Masaru Tomono; Kazuhiro Takeshita; Teruhiko Moriya; Hayakawa Makoto; Ryo Aizawa; Yoshitaka Konishi; Masafumi Hori; Ken Maruyama; Hisashi Nakagawa; Masayuki Miyake; Tomoki Nagai; Satoshi Dei; Takehiko Naruoka; Motoyuki Shima; Toru Kimura; Geert Vandenberghe; John S. Petersen; Danilo De Simone; Foubert Philippe; Hans-Jürgen Stock; Balint Meliorisz; Akihiro Oshima; Seiichi Tagawa
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Paper Abstract

Photosensitized Chemically Amplified ResistTM (PSCARTM) **2.0’s advantages and expectations are reviewed in this paper. Alpha PSCAR in-line UV exposure system (“Litho Enhancer”) was newly installed at imec in a Tokyo Electron Ltd. (TELTM)’s CLEAN TRACKTM LITHIUS ProTM Z connected to an ASML’s NXE:3300. Using the Litho Enhancer, PSCAR 2.0 sensitization preliminary results show that suppression of roughness enhancement may occur while sensitivity is increased. The calibrated PSCAR 2.0 simulator is used for prediction of resist formulation and process optimization. The simulation predicts that resist contrast enhancement could be realized by resist formulation and process optimization with UV flood exposure.

Paper Details

Date Published: 27 March 2018
PDF: 11 pages
Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 1058606 (27 March 2018); doi: 10.1117/12.2297498
Show Author Affiliations
Seiji Nagahara, Tokyo Electron Ltd. (Japan)
Michael Carcasi, Tokyo Electron America, Inc. (United States)
Gosuke Shiraishi, Tokyo Electron Kyushu Ltd. (Japan)
Yuya Kamei, Tokyo Electron Kyushu Ltd. (Belgium)
Kathleen Nafus, Tokyo Electron America, Inc. (United States)
Yukie Minekawa, Tokyo Electron Kyushu Ltd. (Japan)
Hiroyuki Ide, Tokyo Electron Kyushu Ltd. (Japan)
Yoshihiro Kondo, Tokyo Electron Kyushu Ltd. (Japan)
Takahiro Shiozawa, Tokyo Electron Kyushu Ltd. (Belgium)
Keisuke Yoshida, Tokyo Electron Kyushu Ltd. (Belgium)
Masashi Enomoto, Tokyo Electron Kyushu Ltd. (Japan)
Kosuke Yoshihara, Tokyo Electron Kyushu Ltd. (Japan)
Hideo Nakashima, Tokyo Electron Ltd. (Japan)
Serge Biesemans, Tokyo Electron Europe Ltd. (Belgium)
Ryo Shimada, Tokyo Electron Kyushu Ltd. (Japan)
Masaru Tomono, Tokyo Electron Kyushu Ltd. (Japan)
Kazuhiro Takeshita, Tokyo Electron Kyushu Ltd. (Japan)
Teruhiko Moriya, Tokyo Electron Kyushu Ltd. (Japan)
Hayakawa Makoto, Tokyo Electron Kyushu Ltd. (Japan)
Ryo Aizawa, Tokyo Electron Kyushu Ltd. (Japan)
Yoshitaka Konishi, Tokyo Electron Kyushu Ltd. (Japan)
Masafumi Hori, JSR Micro N.V. (Japan)
Ken Maruyama, JSR Corp. (Japan)
Hisashi Nakagawa, JSR Corp. (Japan)
Masayuki Miyake, JSR Micro N.V. (Belgium)
Tomoki Nagai, JSR Corp. (Japan)
Satoshi Dei, JSR Micro N.V. (Belgium)
Takehiko Naruoka, JSR Micro N.V. (Belgium)
Motoyuki Shima, JSR Corp. (Japan)
Toru Kimura, JSR Corp. (Japan)
Geert Vandenberghe, IMEC (Belgium)
John S. Petersen, IMEC (Belgium)
Danilo De Simone, IMEC (Belgium)
Foubert Philippe, IMEC (Belgium)
Hans-Jürgen Stock, Synopsys GmbH (Germany)
Balint Meliorisz, Synopsys GmbH (Germany)
Akihiro Oshima, Osaka Univ. (Japan)
Seiichi Tagawa, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 10586:
Advances in Patterning Materials and Processes XXXV
Christoph K. Hohle, Editor(s)

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