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Proceedings Paper

Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures
Author(s): Gregory Blachut; Stephen M. Sirard; Andrew Liang; Chris A. Mack; Michael J. Maher; Paulina A. Rincon-Delgadillo; Boon Teik Chan; Geert Mannaert; Geert Vandenberghe; C. Grant Willson; Christopher J. Ellison; Diane Hymes
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Paper Abstract

A pattern transfer study was conducted to monitor the evolution of roughness in sub-10 nm half-pitch lines generated by the directed self-assembly (DSA) of a high-chi, silicon-containing block copolymer, poly(4-trimethylsilylstyrene)-block-poly(4-methoxystyrene). Unbiased roughness measurements were used to characterize the roughness of the structures before and after pattern transfer into silicon nitride. Parameters of the reactive ion etch process used as a dry development were systematically modified to minimize undesired line walking created by the DSA pre-pattern and to determine their impacts on roughness. The results of this study indicate that an optimized dry development can mitigate the effects of pre-pattern inhomogeneity, and that both dry development and pattern transfer steps effect the roughness of the final structures.

Paper Details

Date Published: 22 March 2018
PDF: 12 pages
Proc. SPIE 10589, Advanced Etch Technology for Nanopatterning VII, 1058907 (22 March 2018); doi: 10.1117/12.2297489
Show Author Affiliations
Gregory Blachut, Lam Research Corp. (United States)
Stephen M. Sirard, Lam Research Corp. (United States)
Andrew Liang, Lam Research Corp. (United States)
Chris A. Mack, Fractilia, LLC (United States)
Michael J. Maher, The Univ. of Texas at Austin (United States)
Paulina A. Rincon-Delgadillo, IMEC (Belgium)
Boon Teik Chan, IMEC (Belgium)
Geert Mannaert, IMEC (Belgium)
Geert Vandenberghe, IMEC (Belgium)
C. Grant Willson, The Univ. of Texas at Austin (United States)
Christopher J. Ellison, Univ. of Minnesota, Twin Cities (United States)
Diane Hymes, Lam Research Corp. (United States)

Published in SPIE Proceedings Vol. 10589:
Advanced Etch Technology for Nanopatterning VII
Sebastian U. Engelmann, Editor(s)

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