Share Email Print
cover

Proceedings Paper

Complex EUV imaging reflectometry: spatially resolved 3D composition determination and dopant profiling with a tabletop 13nm source
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

With increasingly 3D devices becoming the norm, there is a growing need in the semiconductor industry and in materials science for high spatial resolution, non-destructive metrology techniques capable of determining depth-dependent composition information on devices. We present a solution to this problem using ptychographic coherent diffractive imaging (CDI) implemented using a commercially available, tabletop 13 nm source. We present the design, simulations, and preliminary results from our new complex EUV imaging reflectometer, which uses coherent 13 nm light produced by tabletop high harmonic generation. This tool is capable of determining spatially-resolved composition vs. depth profiles for samples by recording ptychographic images at multiple incidence angles. By harnessing phase measurements, we can locally and nondestructively determine quantities such as device and thin film layer thicknesses, surface roughness, interface quality, and dopant concentration profiles. Using this advanced imaging reflectometer, we can quantitatively characterize materials-sciencerelevant and industry-relevant nanostructures for a wide variety of applications, spanning from defect and overlay metrology to the development and optimization of nano-enhanced thermoelectric or spintronic devices.

Paper Details

Date Published: 13 March 2018
PDF: 4 pages
Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105850M (13 March 2018); doi: 10.1117/12.2297464
Show Author Affiliations
Christina L. Porter, JILA (United States)
Michael Tanksalvala, JILA (United States)
Michael Gerrity, JILA (United States)
Galen P. Miley, Northwestern Univ. (United States)
Yuka Esashi, JILA (United States)
Naoto Horiguchi, IMEC (Belgium)
Xiaoshi Zhang, KMLabs. Inc. (United States)
Charles S. Bevis, JILA (United States)
Robert Karl, JILA (United States)
Peter Johnsen, JILA (United States)
Daniel E. Adams, JILA (United States)
Henry C. Kapteyn, JILA (United States)
KMLabs Inc. (United States)
Margaret M. Murnane, JILA (United States)
KMLabs Inc. (United States)


Published in SPIE Proceedings Vol. 10585:
Metrology, Inspection, and Process Control for Microlithography XXXII
Vladimir A. Ukraintsev, Editor(s)

© SPIE. Terms of Use
Back to Top