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Optimized plasma etch window of block copolymers and neutral brush layers for enhanced direct self-assembly pattern transfer into a hardmask layer
Author(s): Nickolas Brakensiek; Kui Xu; Daniel Sweat; Mary Ann Hockey
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Paper Abstract

Directed self-assembly (DSA) of block copolymers (BCPs) is one of the most promising patterning technologies for future lithography nodes. However, one of the biggest challenges to DSA is the pattern transfer by plasma etching from BCP to hardmask (HM) because the etch selectivity between BCP and neutral brush layer underneath is usually not high enough to enable robust pattern transfer. This paper will explore the plasma etch conditions of both BCPs and neutral brush layers that may improve selectivity and allow a more robust pattern transfer of DSA patterns into the hardmask layer. The plasma etching parameters that are under investigation include the selection of oxidative or reductive etch chemistries, as well as plasma gas pressure, power, and gas mixture fractions. Investigation into the relationship between BCP/neutral brush layer materials with varying chemical compositions and the plasma etching conditions will be highlighted. The culmination of this work will demonstrate important etch parameters that allow BCPs and neutral brush layers to be etched into the underlying hardmask layer with a large process window.

Paper Details

Date Published: 20 March 2018
PDF: 7 pages
Proc. SPIE 10589, Advanced Etch Technology for Nanopatterning VII, 105890S (20 March 2018); doi: 10.1117/12.2297456
Show Author Affiliations
Nickolas Brakensiek, Brewer Science, Inc. (United States)
Kui Xu, Brewer Science, Inc. (United States)
Daniel Sweat, Brewer Science, Inc. (United States)
Mary Ann Hockey, Brewer Science, Inc. (United States)


Published in SPIE Proceedings Vol. 10589:
Advanced Etch Technology for Nanopatterning VII
Sebastian U. Engelmann, Editor(s)

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