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Advanced process and defect characterization methodology to support process development of advanced patterning structures
Author(s): Supriya Ketkar; Junhan Lee; Sen Asokamani; Winston Cho; Shailendra Mishra
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Paper Abstract

This paper discusses the approach and solution adopted by GLOBALFOUNDRIES, a high volume manufacturing (HVM) foundry, for dry-etch related edge-signature surface particle defects issue facing the sub-nm node in the gate-etch sector. It is one of the highest die killers for the company in the 14-nm node. We have used different approaches to attack and rectify the edge signature surface particle defect. Several process-related & hardware changes have been successively implemented to achieve defect reduction improvement by 63%. Each systematic process and/or hardware approach has its own unique downstream issues and they have been dealt in a route-cause-effect technique to address the issue.

Paper Details

Date Published: 20 March 2018
PDF: 6 pages
Proc. SPIE 10589, Advanced Etch Technology for Nanopatterning VII, 105890F (20 March 2018); doi: 10.1117/12.2297451
Show Author Affiliations
Supriya Ketkar, GLOBALFOUNDRIES Inc. (United States)
Junhan Lee, GLOBALFOUNDRIES Inc. (United States)
Sen Asokamani, GLOBALFOUNDRIES Inc. (United States)
Winston Cho, GLOBALFOUNDRIES Inc. (United States)
Shailendra Mishra, GLOBALFOUNDRIES Inc. (United States)


Published in SPIE Proceedings Vol. 10589:
Advanced Etch Technology for Nanopatterning VII
Sebastian U. Engelmann, Editor(s)

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