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Proceedings Paper

Novel Sn-based photoresist for high aspect ratio patterning
Author(s): Mengjun Li; Viacheslav Manichev; Fangzhou Yu; Danielle Hutchison; May Nyman; Torgny Gustafsson; Leonard C. Feldman; Eric L. Garfunkel
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Paper Abstract

Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (~92 eV). β-NaSn13 ([NaO4(BuSn)12(OH)3(O)9(OCH3)12(Sn(H2O)2)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ~ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.

Paper Details

Date Published: 13 March 2018
PDF: 8 pages
Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105860K (13 March 2018); doi: 10.1117/12.2297440
Show Author Affiliations
Mengjun Li, Rutgers, The State Univ. of New Jersey (United States)
Viacheslav Manichev, Rutgers, The State Univ. of New Jersey (United States)
Fangzhou Yu, Rutgers, The State Univ. of New Jersey (United States)
Danielle Hutchison, Oregon State Univ. (United States)
May Nyman, Oregon State Univ. (United States)
Torgny Gustafsson, Rutgers, The State Univ. of New Jersey (United States)
Leonard C. Feldman, Rutgers, The State Univ. of New Jersey (United States)
Eric L. Garfunkel, Rutgers, The State Univ. of New Jersey (United States)


Published in SPIE Proceedings Vol. 10586:
Advances in Patterning Materials and Processes XXXV
Christoph K. Hohle, Editor(s)

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