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Proceedings Paper

Ultimate patterning limits for EUV at 5nm node and beyond
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Paper Abstract

The 5nm technology node introduces more aggressive geometries than previous nodes. In this paper, we are introducing a comprehensive study to examine the pattering limits of EUV at 0.33NA. The study is divided into two main approaches: (A) Exploring pattering limits of Single Exposure EUV Cut/Block mask in Self-Aligned-Multi-Patterning (SAMP) process, and (B) Exploring the pattering limits of a Single Exposure EUV printing of metal Layers.

The printability of the resulted OPC masks is checked through a model based manufacturing flow for the two pattering approaches. The final manufactured patterns are quantified by Edge Placement Error (EPE), Process Variation Band (PVBand), soft/hard bridging and pinching, Image Log Slope (ILS) and Common Depth of Focus (CDOF)

Paper Details

Date Published: 20 March 2018
PDF: 15 pages
Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 1058321 (20 March 2018); doi: 10.1117/12.2297412
Show Author Affiliations
Rehab Kotb Ali, Mentor Graphics Egypt (Egypt)
Ahmed Hamed Fatehy, Mentor Graphics Egypt (Egypt)
Neal Lafferty, Mentor Graphics Corp. (United States)
James Word, Mentor Graphics Corp. (United States)


Published in SPIE Proceedings Vol. 10583:
Extreme Ultraviolet (EUV) Lithography IX
Kenneth A. Goldberg, Editor(s)

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