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High-resolution EUV lithography using a multi-trigger resist
Author(s): C. Popescu; D. Kazazis; A. McClelland; G. Dawson; J. Roth; W. Theis; Y. Ekinci; A. P. G. Robinson
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Paper Abstract

As minimum lithographic size continues to shrink, the development of techniques and resist materials capable of high resolution, high sensitivity and low line edge roughness (LER) have become increasingly important for next-generation lithography. In this study we present results where the behaviour of the resist is driven towards the multi-trigger regime by manipulating the resist formulation. We also present results obtained after enhancements of the base molecule to give high resolution, better LER, and a significant sensitivity enhancement of 40% over the standard material. Finally, we present the inclusion of non-metallic high-Z elements into the formulation to allow for a further reduction in LER at the same resolution and sensitivity as seen for the enhanced MTR molecule, indicating a direction for further improvements.

Paper Details

Date Published: 19 March 2018
PDF: 10 pages
Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105831L (19 March 2018); doi: 10.1117/12.2297406
Show Author Affiliations
C. Popescu, The Univ. of Birmingham (United Kingdom)
D. Kazazis, Paul Scherrer Institut (Switzerland)
A. McClelland, Irresistible Materials Ltd. (United Kingdom)
G. Dawson, The Univ. of Birmingham (United Kingdom)
J. Roth, Nano-C, Inc. (United States)
W. Theis, The Univ. of Birmingham (United Kingdom)
Y. Ekinci, Paul Scherrer Institut (Switzerland)
A. P. G. Robinson, The Univ. of Birmingham (United Kingdom)
Irresistible Materials Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 10583:
Extreme Ultraviolet (EUV) Lithography IX
Kenneth A. Goldberg, Editor(s)

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