Share Email Print
cover

Proceedings Paper

Study of electron beam and extreme ultraviolet resist utilizing polarity change and radical crosslinking
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Chemically amplified resists have been used for the fabrication of semiconductor devices. With the miniaturization of circuits, the performance of chemically amplified resists approaches their limit due to the acid diffusion. The development of a novel platform without acid diffusion becomes important. In this study, we proposed a negative-type polymer resist used for extreme ultraviolet (EUV) and electron beam (EB) lithography. The proposed resist utilizes polarity change and radical crosslinking triggered by EUV/EB exposure. Polymers having triarylsulfonium cations and 2,2,2-trisubstitued acetophenone as side chains were designed for realizing the dual insolubilization property. 2,2,2- trisubstitued acetophenone was incorporated for the efficient radical generation on the polymer structure for the crosslinking. An onium salt was incorporated for the efficient use of thermalized electrons for the polarity change and the radical generation of the side chain. In addition, triphenyl-(4-vinyl-phenyl)-stannane (StTPSn) was incorporated into the resist polymer as the EUV/EB absorber to enhance sensitivity. The highly sensitive property of the designed polymers was demonstrated.

Paper Details

Date Published: 13 March 2018
PDF: 6 pages
Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105860H (13 March 2018); doi: 10.1117/12.2297392
Show Author Affiliations
Satoshi Enomoto, Osaka Univ. (Japan)
Toyo Gosei Co., Ltd. (Japan)
Takumi Yoshino, Toyo Gosei Co., Ltd. (Japan)
Kohei Machida, Toyo Gosei Co., Ltd. (Japan)
Takahiro Kozawa, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 10586:
Advances in Patterning Materials and Processes XXXV
Christoph K. Hohle, Editor(s)

© SPIE. Terms of Use
Back to Top