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The intrinsic role of membrane morphology to reduce defectivity in advanced photochemicals
Author(s): Tetsu Kohyama; Aiwen Wu; Kozue Miura; Yasushi Ohyashiki
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Paper Abstract

Defect source reduction in leading-edge iArF resists is a critical requirement to improve device performance and overall yield in lithography manufacturing processes. It is believed that some polar polymers can aggregate and be responsible for single or multiple micro-bridge defects. Further investigation into the formation of these defects is needed. We have previously presented the effective removal of gel-like polymers using nylon media [1]. However, as the industry is moving to smaller feature sizes, there is a need to further improve the defect removal efficiency. In this paper, a filter, comprised of a novel membrane called Azora with unique morphology and high flow performance is introduced. This new filter shows better on-wafer in an advanced ArF solution than conventional Nylon and UPE media. In addition, it shows improved stability during chemical storage. Results and possible retention mechanisms are discussed.

Paper Details

Date Published: 13 March 2018
PDF: 5 pages
Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 1058617 (13 March 2018); doi: 10.1117/12.2297389
Show Author Affiliations
Tetsu Kohyama, Nihon Entegris K.K. (United States)
Aiwen Wu, Entegris, Inc. (United States)
Kozue Miura, Nihon Entegris K.K. (United States)
Yasushi Ohyashiki, Nihon Entegris K.K. (United States)


Published in SPIE Proceedings Vol. 10586:
Advances in Patterning Materials and Processes XXXV
Christoph K. Hohle, Editor(s)

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