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Proceedings Paper

A comparative study of EUV absorber materials using lensless actinic imaging of EUV photomasks
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Paper Abstract

For EUV photomasks, high-k absorber materials represent a potential strategy to effectively mitigate mask 3D effects which are getting more prominent as the scanners’ NA increases. The performance of RESCAN, our actinic lensless imaging microscope is evaluated through three different absorber materials (HSQ, TaBN, and Ni) together with the imaging properties of the materials themselves. Defect maps for each material are analyzed and compared.

Paper Details

Date Published: 20 March 2018
PDF: 8 pages
Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105831H (20 March 2018); doi: 10.1117/12.2297381
Show Author Affiliations
S. Fernandez, Paul Scherrer Institut (Switzerland)
D. Kazazis, Paul Scherrer Institut (Switzerland)
R. Rajeev, Paul Scherrer Institut (Switzerland)
I. Mochi, Paul Scherrer Institut (Switzerland)
P. Helfenstein, Paul Scherrer Institut (Switzerland)
S. Yoshitake, NuFlare Technology, Inc. (Japan)
Y. Ekinci, Paul Scherrer Institut (Switzerland)

Published in SPIE Proceedings Vol. 10583:
Extreme Ultraviolet (EUV) Lithography IX
Kenneth A. Goldberg, Editor(s)

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