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Developing a flexible model of electron scattering in solid for charging analysis
Author(s): Chahn Lee; Toshiyuki Yokosuka; Hideyuki Kazumi
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Paper Abstract

We have been developing a charging simulator “CHARMs”, which is based on 3D finite element method, to predict the characteristics of signal from charged pattern on surface of semi-conductor during the SEM observation. We have constructed a new flexible model to simulate the in-solid electron scattering by the Langevin equation for “CHARMs”. Our new model can manipulate the size of the diffusion cloud of scattering electron by the parameters of it and calculate ten times faster than the conventional Monte Carlo (MC) method. In addition to that, the model has the possibility to accurately describe the scattering of low energy electron. We also confirmed that the same results of the conventional MC method can be obtained from the simulation model of metal pattern buried in the sample.

Paper Details

Date Published: 13 March 2018
PDF: 14 pages
Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105852E (13 March 2018); doi: 10.1117/12.2297371
Show Author Affiliations
Chahn Lee, Hitachi, Ltd. (Japan)
Toshiyuki Yokosuka, Hitachi, Ltd. (Japan)
Hideyuki Kazumi, Hitachi High-Technologies Corp. (Japan)


Published in SPIE Proceedings Vol. 10585:
Metrology, Inspection, and Process Control for Microlithography XXXII
Vladimir A. Ukraintsev, Editor(s)

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