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Proceedings Paper

Evaluation of EUV mask impacts on wafer line-edge roughness using aerial and SEM image analyses
Author(s): Xuemei Chen; Erik Verduijn; Obert Wood; Timothy Brunner; Renzo Capelli; Dirk Hellweg; Martin Dietzel; Grizelda Kersteen
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Paper Abstract

As more aggressive EUV imaging techniques and resists with lower intrinsic roughness are developed for patterning at 7nm and 5nm technology nodes, EUV mask roughness will contribute an increasing portion of the total printed linewidth roughness (LWR). In this study, we perform a comprehensive characterization of the EUV mask impacts on wafer LWR using actinic aerial images and wafer SEM images. Analytical methods are developed to properly separate and compare the LWR effects from EUV masks, photon shot noise, and resist stochastics. The use of EUV AIMSTM to emulate and measure incident photon shot noise effects is explored and demonstrated. A sub-10nm EUV mask is qualified using EUV AIMSTM with scanner equivalent dose settings that are required for patterning 16nm and 18nm half-pitch L/S features with low- and high-dose CAR resists. The variance and spectral components contributing to wafer LWR are quantified and compared.

Paper Details

Date Published: 27 March 2018
PDF: 10 pages
Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830J (27 March 2018); doi: 10.1117/12.2297364
Show Author Affiliations
Xuemei Chen, GLOBALFOUNDRIES Inc. (United States)
Erik Verduijn, GLOBALFOUNDRIES IMEC (Belgium)
Obert Wood, GLOBALFOUNDRIES Inc. (United States)
Timothy Brunner, GLOBALFOUNDRIES Inc. (United States)
Renzo Capelli, Carl Zeiss SMT GmbH (Germany)
Dirk Hellweg, Carl Zeiss SMT GmbH (Germany)
Martin Dietzel, Carl Zeiss SMT GmbH (Germany)
Grizelda Kersteen, Carl Zeiss SMT GmbH (Germany)

Published in SPIE Proceedings Vol. 10583:
Extreme Ultraviolet (EUV) Lithography IX
Kenneth A. Goldberg, Editor(s)

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