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Proceedings Paper

Defect detection strategies and process partitioning for SE EUV patterning
Author(s): Luciana Meli; Karen Petrillo; Anuja De Silva; John Arnold; Nelson Felix; Chris Robinson; Benjamin Briggs; Shravan Matham; Yann Mignot; Jeffrey Shearer; Bassem Hamieh; Koichi Hontake; Lior Huli; Corey Lemley; Dave Hetzer; Eric Liu; Ko Akiteru; Shinichiro Kawakami; Takeshi Shimoaoki; Yusaku Hashimoto; Hiroshi Ichinomiya; Akiko Kai; Koichiro Tanaka; Ankit Jain; Heungsoo Choi; Barry Saville; Chet Lenox
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Paper Abstract

The key challenge for enablement of a 2nd node of single-expose EUV patterning is understanding and mitigating the patterning-related defects that narrow the process window. Typical in-line inspection techniques, such as broadband plasma (291x) and e-beam systems, find it difficult to detect the main yield-detracting defects post-develop, and thus understanding the effects of process improvement strategies has become more challenging. New techniques and methodologies for detection of EUV lithography defects, along with judicious process partitioning, are required to develop process solutions that improve yield.

This paper will first discuss alternative techniques and methodologies for detection of lithography-related defects, such as scumming and microbridging. These strategies will then be used to gain a better understanding of the effects of material property changes, process partitioning, and hardware improvements, ultimately correlating them directly with electrical yield detractors .

Paper Details

Date Published: 28 March 2018
PDF: 17 pages
Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830E (28 March 2018); doi: 10.1117/12.2297362
Show Author Affiliations
Luciana Meli, IBM Corp. (United States)
Karen Petrillo, IBM Corp. (United States)
Anuja De Silva, IBM Corp. (United States)
John Arnold, IBM Corp. (United States)
Nelson Felix, IBM Corp. (United States)
Chris Robinson, IBM Corp. (United States)
Benjamin Briggs, IBM Corp. (United States)
Shravan Matham, IBM Corp. (United States)
Yann Mignot, IBM Corp. (United States)
Jeffrey Shearer, IBM Corp. (United States)
Bassem Hamieh, IBM Corp. (United States)
Koichi Hontake, TEL Technology Ctr., America, LLC (United States)
Lior Huli, TEL Technology Ctr., America, LLC (United States)
Corey Lemley, TEL Technology Ctr., America, LLC (United States)
Dave Hetzer, TEL Technology Ctr., America, LLC (United States)
Eric Liu, TEL Technology Ctr., America, LLC (United States)
Ko Akiteru, TEL Technology Ctr., America, LLC (United States)
Shinichiro Kawakami, Tokyo Electron Kyushu Ltd. (Japan)
Takeshi Shimoaoki, Tokyo Electron Kyushu Ltd. (Japan)
Yusaku Hashimoto, Tokyo Electron Kyushu Ltd. (Japan)
Hiroshi Ichinomiya, Tokyo Electron Kyushu Ltd. (Japan)
Akiko Kai, Tokyo Electron Kyushu Ltd. (Japan)
Koichiro Tanaka, Tokyo Electron Kyushu Ltd. (Japan)
Ankit Jain, KLA-Tencor Corp. (United States)
Heungsoo Choi, KLA-Tencor Corp. (United States)
Barry Saville, KLA-Tencor Corp. (United States)
Chet Lenox, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 10583:
Extreme Ultraviolet (EUV) Lithography IX
Kenneth A. Goldberg, Editor(s)

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