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Proceedings Paper

Higher order intra-field alignment for intra-wafer lens and reticle heating control
Author(s): Charlie Chen; En-Chuan Lio; Hsiao Lin Hsu; Jia Hung Chang; Sho Shen Lee; Patrick Lomtscher; Boris Habets; Georg Erley; Norman Birnstein; Steven Tottewitz; Rex Liu
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Paper Abstract

Before each wafer exposure, the photo lithography scanner’s alignment system measures alignment marks to correct for placement errors and wafer deformation. To minimize throughput impact, the number of alignment measurements is limited. Usually, the wafer alignment does not correct for intrafield effects. However, after calibration of lens and reticle heating, residual heating effects remain. A set of wafers is exposed with special reticles containing many alignment marks, enabling intra-field alignment. Reticles with a dense alignment layout have been used, with different defined intra-field bias. In addition, overlay simulations are performed with dedicated higher order intra-field overlay models to compensate for wafer-to-wafer and across-wafer heating.

Paper Details

Date Published: 13 March 2018
PDF: 12 pages
Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105851R (13 March 2018); doi: 10.1117/12.2297358
Show Author Affiliations
Charlie Chen, United Microelectronics Corp. (Taiwan)
En-Chuan Lio, United Microelectronics Corp. (Taiwan)
Hsiao Lin Hsu, United Microelectronics Corp. (Taiwan)
Jia Hung Chang, United Microelectronics Corp. (Taiwan)
Sho Shen Lee, United Microelectronics Corp. (Taiwan)
Patrick Lomtscher, Qoniac GmbH (Germany)
Boris Habets, Qoniac GmbH (Germany)
Georg Erley, Qoniac GmbH (Germany)
Norman Birnstein, Qoniac GmbH (Germany)
Steven Tottewitz, Qoniac GmbH (Germany)
Rex Liu, Qoniac Taiwan Ltd. (Taiwan)

Published in SPIE Proceedings Vol. 10585:
Metrology, Inspection, and Process Control for Microlithography XXXII
Vladimir A. Ukraintsev, Editor(s)

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