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Range pattern matching with layer operations and continuous refinements
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Paper Abstract

At advanced and mainstream process nodes (e.g., 7nm, 14nm, 22nm, and 55nm process nodes), lithography hotspots can exist in layouts of integrated circuits even if the layouts pass design rule checking (DRC). Existence of lithography hotspots in a layout can cause manufacturability issues, which can result in yield losses of manufactured integrated circuits. In order to detect lithography hotspots existing in physical layouts, pattern matching (PM) algorithms and commercial PM tools have been developed. However, there are still needs to use DRC tools to perform PM operations. In this paper, we propose a PM synthesis methodology, which uses a continuous refinement technique, for the automatic synthesis of a given lithography hotspot pattern into a DRC deck, which consists of layer operation commands, so that an equivalent PM operation can be performed by executing the synthesized deck with the use of a DRC tool. Note that the proposed methodology can deal with not only exact patterns, but also range patterns. Also, lithography hotspot patterns containing multiple layers can be processed. Experimental results show that the proposed methodology can accurately and efficiently detect lithography hotspots in physical layouts.

Paper Details

Date Published: 20 March 2018
PDF: 14 pages
Proc. SPIE 10588, Design-Process-Technology Co-optimization for Manufacturability XII, 105880J (20 March 2018); doi: 10.1117/12.2297351
Show Author Affiliations
I-Lun Tseng, GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore)
Zhao Chuan Lee, GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore)
Yongfu Li, GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore)
Valerio Perez, GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore)
Vikas Tripathi, GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore)
Jonathan Yoong Seang Ong, GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore)

Published in SPIE Proceedings Vol. 10588:
Design-Process-Technology Co-optimization for Manufacturability XII
Jason P. Cain, Editor(s)

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