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Proceedings Paper

Substrate damageless tri-layer process for advanced ArFi lithography
Author(s): Kengo Ehara; Ichihiro Miura; Masayoshi Ishikawa; Yuushi Matsumura; Kazunori Takanashi; Tatsuya Sakai; Hiroki Nakagawa
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Paper Abstract

The importance of multi-layer process with spin-on hard masks increases for various processes on the next generation of logic and memory devices. The tri-layer process with spin-on glass (SOG) and spin-on carbon (SOC) is mainly used for ArFi multi-patterning lithography process, in order to provide wide process window by suppressing substrate reflectivity as well as etch-transfer fine pattern to substrate by enhancement of etch selectivity. However, conventional tri-layer process in advanced node device has the critical issue on substrate damage in SOG removal process because of vulnerability of topography wafers which contain smaller pattern features and thinner ALD/CVD films. In order to solve this problem, we developed novel SOG removal process with unique SOG/SOC materials for substrate damage mitigation. We will report Thin SOG Process for substrate damage-less SOG removal process.

Paper Details

Date Published: 19 March 2018
PDF: 6 pages
Proc. SPIE 10584, Novel Patterning Technologies 2018, 105841B (19 March 2018); doi: 10.1117/12.2297337
Show Author Affiliations
Kengo Ehara, JSR Corp. (Japan)
Ichihiro Miura, JSR Corp. (Japan)
Masayoshi Ishikawa, JSR Corp. (Japan)
Yuushi Matsumura, JSR Corp. (Japan)
Kazunori Takanashi, JSR Corp. (Japan)
Tatsuya Sakai, JSR Corp. (Japan)
Hiroki Nakagawa, JSR Corp. (Japan)

Published in SPIE Proceedings Vol. 10584:
Novel Patterning Technologies 2018
Eric M. Panning, Editor(s)

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