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Proceedings Paper

New spin on carbon materials made from hemicellulose for hardmask layer
Author(s): Kazuyo Morita; Kimiko Yamamoto; Koki Hongo; Masahiko Harumoto; Yuji Tanaka; Chisayo Nakayama; You Arisawa; Harold Stokes; Masaya Asai
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Paper Abstract

Hemicellulose spin on carbon (SOC) material was newly developed for hardmask layer. For next generation lithography, high etching selectivity is strongly required. However, there is an issue of a balance of cost and etching selectivity in conventional process. Hemicellulose spin on carbon material is able to overcome this issue by virtue of its chemical structure and newly-developed reactive hemicellulose hardening (R2H). R2H means that hemicellulose unit is selectively hardened by chemical reaction. In this study, deep L/S and hole patterns were fabricated by using hemicellulose SOC with R2H and its dry etching selectivity was 26. Additionally, compatibility with EUV lithography was confirmed. Favorable pattern made of resist for EUV lithography was obtained on Hemicellulose SOC and successfully transferred into hemicellulose SOC.

Paper Details

Date Published: 28 March 2018
PDF: 6 pages
Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105860M (28 March 2018); doi: 10.1117/12.2297333
Show Author Affiliations
Kazuyo Morita, Oji Holdings Corp. (Japan)
Kimiko Yamamoto, Oji Holdings Corp. (Japan)
Koki Hongo, Oji Holdings Corp. (Japan)
Masahiko Harumoto, SCREEN Semiconductor Solutions Co., Ltd. (Japan)
Yuji Tanaka, SCREEN Semiconductor Solutions Co., Ltd. (Japan)
Chisayo Nakayama, SCREEN Semiconductor Solutions Co., Ltd. (Japan)
You Arisawa, SCREEN SPE Germany GmbH (Germany)
Harold Stokes, SCREEN SPE Germany GmbH (Germany)
Masaya Asai, SCREEN Semiconductor Solutions Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 10586:
Advances in Patterning Materials and Processes XXXV
Christoph K. Hohle, Editor(s)

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